Recently, we conducted a detailed physical analysis on a DRAM memory chip to map out the precise dimensions and structural features corresponding to a specific process node.
The device in question was an SK hynix LPDDR5X-10667 module, fabricated using the 1b node (the fifth generation of SK hynix’s 10 nm-class DRAM process technology).
We started with frontside deprocessing to selectively remove layers, followed by capturing high-resolution images using optical microscopy. The prepared sample was then examined in greater detail with Scanning Electron Microscopy (SEM), allowing us to measure and document a significant portion of the critical dimensions.
To reveal the remaining finest features—particularly in the vertical direction—a cross-section was required. We initially prepared one using Focused Ion Beam (FIB) milling, but the resolution proved insufficient for our needs. We therefore turned to Scanning Transmission Electron Microscopy (STEM), which delivered exceptionally clear and precise images of the target structures.
By combining these complementary techniques—optical microscopy, SEM, FIB, and ultimately STEM—we obtained a comprehensive and accurate view of the physical implementation in this advanced 1b-node LPDDR5X DRAM.
