At Chipwise, we specialize in high-resolution cross-sectional imaging and precision sample preparation to uncover the nanoscale structures powering today’s cutting-edge logic and memory chips. Leveraging advanced focused ion beam (FIB) milling paired with high-resolution scanning transmission electron microscopy (STEM), we provide detailed views of complex device architectures—including Gate-All-Around (GAA) transistors (also known as nanosheets), FinFETs, and RibbonFETs.
Precision Cross-Section Imaging: Revealing Next-Generation Transistor Structures
This cross-section highlights the intricate architecture of Samsung’s groundbreaking 2nm GAA process, as implemented in the Exynos 2600 (also called MBCFET in Samsung’s implementation)—the company’s first mobile chipset to adopt Gate-All-Around transistor technology.
The image reveals alternating layers of copper metallization and low-K insulator layers. Thanks to exceptional material contrast, individual interfaces and structural details are clearly distinguishable, offering deep insights into the performance and efficiency advantages of GAA over traditional FinFET designs. For more information or to discuss custom analysis for your advanced nodes, feel free to get in touch.
